Discrete Power GaN HEMTs

AM025WN-BI-R

AMCOM’s AM025WN-BI-R is a discrete GaN/SiC HEMT that has a total gate width of 2.5mm. It is in a ceramic package for operating up to 8 GHz. The BI series uses a specially designed ceramic package with bent (BI-G) or straight (BI) leads in a drop-in mounting style. The flange at the bottom of the package serves simultaneously as DC ground, RF ground, and thermal path. This part is RoHS compliant.


General Parameters:
Freq (GHz): DC
Fmax (GHz): 8
Gain (dB): 16
P1dB (dBm): 38.9
Psat (dBm): 40
Bias (V): +28 / -2
Package: SMT
ECCN: EAR99
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