GaAs FETs

AM020MH2-BI-R

AMCOM’s AM020MH2-A-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total device periphery of 4mm. The AM02MH2-BI-R is designed for high power microwave applications, operating up to 6 GHz. The BI series uses a specially designed ceramic package with straight leads in a drop-in mounting style. The flange at the bottom of the package serves simultaneously as DC ground, RF ground, and thermal path. A bent-lead version of the package is also available for SMT applications.


General Parameters:
Freq (GHz): DC
Fmax (GHz): 6
Gain (dB): 15
P1dB (dBm): 31
IP3 (dBm): 46
Bias (V): +14 / -1
Package: SMT
ECCN: EAR99
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