GaAs FETs

AM012MX-QG-R

AMCOM’s AM012MX-QG-R is a part of the QG series of GaAs MESFETs. This part has a total gate width of 1.2mm. The AM012MX-QG-R is designed for high power microwave applications, operating up to 6GHz. The QG series is in a plastic package with all leads bent in a surface mounting style on PC Board. The bottom of the package serves simultaneously as DC ground, RF ground, and thermal path. For frequencies above 5GHz, we recommend to mount the device directly on a metal heat sink, which is also RF ground, to avoid the inductance of via holes on PCB. This FET is RoHS Compliant.


General Parameters:
Freq (GHz): DC
Fmax (GHz): 6
Gain (dB): 13.5
P1dB (dBm): 25
IP3 (dBm): 37
Bias (V): +5 / -1
Package: SMT
ECCN: EAR99
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