GaAs FETs

AM010MH4-BI-R

AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This part has a total device periphery of 4mm. The AM010MH4-BI-R is designed for high power microwave applications, operating up to 3GHz. The BI series uses a specially designed ceramic package with bent or straight leads and flange in a drop-in mounting style. The flange at the bottom of the package serves simultaneously as DC ground, RF ground and thermal path. This HiFET is RoHS compliant.


General Parameters:
Freq (GHz): DC
Fmax (GHz): 3
Gain (dB): 19
P1dB (dBm): 31
IP3 (dBm): 46
Bias (V): +28 / -1
Package: SMT
ECCN: EAR99
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